Mimura began to research an alternative semiconductor to the silicon used in the MOSFET, hoping it would be the solution.
The MOSFET, which had been invented in 1966, was the fastest transistor available at the time, but Mimura and other engineers wanted to make it even quicker by enhancing electron mobility-how speedily electrons could move through semiconducting material. THE INSTITUTEWhile working as an electronics engineer in 1977 at Fujitsu Laboratories in Atsugi, Japan, IEEE Life Fellow Takashi Mimura began researching how to make the metal-oxide-semiconductor field-effect transistor quicker.
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